DocumentCode :
2102135
Title :
The transistor: from Lillienfield to Landauer, to...? [transistor scaling limits]
Author :
Lundstrom, M.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
fYear :
2004
fDate :
21-23 June 2004
Abstract :
Summary form only given. This paper describes ultrasmall transistors using the conceptual picture and simulation techniques that are being developed to explain conduction in molecules. After describing a simple picture of conduction in molecules, it applies that approach to the nanoscale MOSFET and shows that it leads to a simple, but physically insightful view of the ultrasmall MOSFET. Quantum kinetic simulations are then used to examine realistic issues for "end-of-the-roadmap" MOSFETs. Next, it addresses the question of whether any transistor (e.g. Ge, InAs, carbon nanotubes, or conjugated organic molecules) can provide a significant advantage over the silicon MOSFET. The paper concludes with a brief discussion of the fundamental limits that apply to any transistor and with some thoughts on where electronic device technology is heading.
Keywords :
MOSFET; molecular electronics; nanoelectronics; nanotube devices; organic semiconductors; Ge; InAs; Si; carbon nanotubes; conjugated organic molecules; molecular conduction; molecular electronics; nanoscale MOSFET; quantum kinetic simulations; scaling limits; ultrasmall transistors; Integrated circuit technology; Kinetic theory; MOSFETs; Microelectronics; Molecular electronics; Moore´s Law; Nanoelectronics; Silicon; System performance; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location :
Notre Dame, IN, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367755
Filename :
1367755
Link To Document :
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