Title :
A novel surface passivation process for HfO2 Ge MOSFETs
Author :
Wu, Nan ; Zhang, Qingchun ; Chunxiang Zhu ; Chan, Daniel S H ; Li, M.-F. ; Balasubramanian, N. ; Du, A.Y. ; Chin, Albert ; Sin, Johnny K O ; Kwong, D.L.
Author_Institution :
Silicon Nano Device Lab, Nat. Univ. of Singapore, Singapore
Abstract :
This work presents a novel surface passivation process for HfO2 Ge MOSFETs which we have developed, using in-situ SiH4 treatment prior to HfO2 deposition. Results show that, compared to conventional surface nitridation, TaN/HfO2/Ge pMOSFETs with in-situ SiH4 surface treatment have much reduced frequency dispersion and hysteresis, improved gate leakage distribution, better subthreshold swing and higher hole mobility.
Keywords :
MOSFET; dielectric thin films; elemental semiconductors; germanium; hafnium compounds; hole mobility; passivation; silicon compounds; MOSFET; SiH4; TaN-HfO2-Ge; frequency dispersion reduction; gate leakage distribution; high-k gate dielectrics; hole mobility; hysteresis reduction; in-situ surface passivation process; subthreshold swing; Annealing; Germanium; Hafnium oxide; MOSFETs; Passivation; Rough surfaces; Silicon; Surface roughness; Surface treatment; Tin;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367762
