Title :
Low workfunction fully silicided gate on SiO2/Si and LaAlO3/GOI n-MOSFETs
Author :
Yu, D.S. ; Chin, Albert ; Hung, B.F. ; Chen, W.J. ; Zhu, C.X. ; Li, M.E. ; Zhu, S.Y. ; Kwong, D.L.
Author_Institution :
Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan
Abstract :
The main challenges for metal-gate/high-k CMOS are to find dual workfunction gates and robust high-k dielectrics. The low workfunction metal-gate for n-MOS is especially difficult since it reacts with oxygen rapidly and is hard to form a silicide or nitride. We have successfully developed 4.2 and 4.3 eV low workfunction NiSi:Hf and NiTiSi gates that were integrated onto SiO2/Si, novel high-k LaAlO3/Si and LaAlO3/GOI n-MOSFETs. The Hf or TiSi is for low workfunction control and the NiSi is for low resistivity.
Keywords :
MOSFET; dielectric thin films; electrical resistivity; elemental semiconductors; germanium; hafnium; lanthanum compounds; nickel compounds; silicon; silicon compounds; titanium compounds; work function; 4.2 eV; 4.3 eV; GOI; Ge; LaAlO3; NiSi:Hf; NiTiSi; SiO2-Si; dual workfunction gates; low resistivity; low workfunction fully silicided gate; n-MOSFET; robust high-k dielectrics; workfunction control; Artificial intelligence; Capacitance-voltage characteristics; Capacitors; Electron mobility; MOSFET circuits; Voltage;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367763
