Impact of reducing RTA temperature on sub-10nm ultra-thin body SOI

In this work, we fabricated sub-10 nm UTB SOI and investigated its properties by using plasma doping (PLAD) and rapid thermal annealing (RTA). It is shown, for the first time, that electrical properties and device scalability of the sub-10 nm thin body were improved with reduced RTA temperature. In scaling down, SOI thickness decreases, but also RTA temperature scaling should be considered. RTA temperature is directly connected to the suppression of the short-channel effect and also it gives more chance for device scalability, especially for sub-20 nm SOI devices.