Title :
Vertical tunnel diodes on high resistivity silicon
Author :
Yan, Yan ; Zhao, Jialin ; Liu, Qingmin ; Zhao, Wei ; Seabaugh, Alan
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
We demonstrate for the first time vertical tunnel diodes formed by rapid thermal diffusion using spin-on diffusants on high resistivity (100) Si substrates, 1000-5000 Ω cm, 100 mm, allowing the extraction of an RF device model. The simple process flow is compatible with techniques found in any commercial front end. The device model is extracted from DC, microwave frequency S-parameter, and RF impedance measurements. The tunnel diode characteristics are well described by the Schulman-Broekaert analytic model, developed for the resonant tunneling diode, and therefore fit readily into SPICE and ADS modeling environments.
Keywords :
S-parameters; electric impedance; equivalent circuits; semiconductor device measurement; semiconductor device models; thermal diffusion; tunnel diodes; 100 mm; 45 MHz to 30 GHz; ADS modeling; RF device model extraction; RF impedance measurements; SPICE; Schulman-Broekaert analytic model; equivalent circuit model; high resistivity silicon; microwave frequency S-parameter measurements; rapid thermal diffusion; resonant tunneling diode; spin-on diffusants; vertical tunnel diodes; Conductivity; Diodes; Impedance measurement; Microwave frequencies; Radio frequency; Rapid thermal processing; Resonant tunneling devices; Scattering parameters; Silicon; Thermal resistance;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367766
