Title :
High power AlGaN/GaN heterojunction FETs for base station applications
Author :
Ando, Y. ; Okamoto, Y. ; Nakayama, T. ; Inoue, T. ; Hataya, K. ; Miyamoto, H. ; Senda, M. ; Hirata, K. ; Kosaki, M. ; Shibata, N. ; Kuzuhara, M.
Author_Institution :
R&D Assoc. for Future Electron Devices, NEC Corp., Otsu, Japan
Abstract :
This work describes high power AlGaN/GaN heterojunction FETs on SiC substrates which we have developed. To our knowledge, Psat values of 203 W and 4 W are the highest ever achieved at 2 GHz and 30 GHz, respectively, for GaN FETs. We believe that GaN FET technology will play a dominant role in future base station systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power field effect transistors; semiconductor heterojunctions; wide band gap semiconductors; 2 GHz; 203 W; 30 GHz; 4 W; AlGaN-GaN; base station systems; field-modulating plate structure; high power heterojunction FET; recessed-gate devices; short channel planar FET; Aluminum gallium nitride; Base stations; Electric breakdown; Electron devices; FETs; Gallium nitride; Heterojunctions; Optical films; Silicon carbide; Silicon compounds;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367769
