Linearity performance of GaN HEMTs with field plates

Author

Wu, Y.F. ; Saxler, A. ; Wisleder, T. ; Moore, M. ; Smith, R.P. ; Sheppard, S. ; Chavarkar, P.M. ; Parikh, P.

Author_Institution

Cree Santa Barbara Technol. Center, Goleta, CA, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

35

Abstract

Recently, electric field modification with GaN-based high-electron-mobility-transistors (HEMTs) using field plates (FP) has resulted in dramatically enhanced power performance. Power densities up to 32 W/mm at 4 GHz have been demonstrated with power-added-efficiency (PAE) of 55%. When scaled to a large periphery, a total output power of 149 W was obtained at 2 GHz. Modern communication applications also require high linearity for power devices. Here we present the linearity performance of GaN-channel HEMTs with various FP lengths at biases up to 108V.

Keywords

linearisation techniques; microwave field effect transistors; microwave power transistors; power HEMT; 108 V; 149 W; 2 GHz; 4 GHz; 55 percent; GaN; HEMT linearity performance; electric field modification; field plate length; large periphery scaling; power density; power devices; power-added-efficiency; Gain; Gallium nitride; HEMTs; Iron; Linearity; MODFETs; Modems; Power generation; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367771

Filename

1367771