DocumentCode
2102569
Title
Theory of optimal pulse shaping for plasma processing
Author
Vincent, Tyrone L. ; Raja, Laxminaryan L.
Author_Institution
Eng. Div., Colorado Sch. of Mines, Golden, CO, USA
Volume
6
fYear
2002
fDate
2002
Firstpage
5119
Abstract
Thin film etching and deposition using low pressure plasma reactors is an integral part of the fabrication of VLSI circuits. This paper discusses the numerical calculation of periodic inputs to achieve desired operating conditions in low pressure plasma reactors. A gradient method is used to optimize the average value of state variables.
Keywords
gradient methods; integrated circuit manufacture; optimal control; process control; sputter etching; thin film circuits; IC fabrication; VLSI; gradient method; optimal pulse shaping; plasma dynamic model; plasma reactors; thin film deposition; thin film etching; Etching; Fabrication; Gradient methods; Inductors; Plasma applications; Plasma materials processing; Pulse shaping methods; Sputtering; Thin film circuits; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
American Control Conference, 2002. Proceedings of the 2002
ISSN
0743-1619
Print_ISBN
0-7803-7298-0
Type
conf
DOI
10.1109/ACC.2002.1025479
Filename
1025479
Link To Document