Title :
10 kV, 123 mΩ-cm2 4H-SiC power DMOSFETs
Author :
Sei-Hying Ryu ; Krishnaswami, Sumi ; O´Loughlin, Michael ; Richmond, James ; Agarwal, Abhishek ; Palmour, John ; Heffier, A.R.
Author_Institution :
Cree, Inc., Durham, NC, USA
Abstract :
Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 mΩ·cm2 is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.
Keywords :
field effect transistor switches; power MOSFET; power semiconductor switches; silicon compounds; wide band gap semiconductors; 10 kV; 4H-SiC power DMOSFET; SiC; high voltage switching; low specific on-resistance; majority carrier switches; temperature independent switching characteristics; Iron; MOSFET circuits; Materials science and technology; Photonic band gap; Power transistors; Silicon carbide; Testing; Voltage; World Wide Web;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367777
