Direct measurements of the AC performance of carbon nanotube field effect transistors

Author

Singh, D.V. ; Jenkins, K.A.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

53

Abstract

Carbon nanotube field-effect transistors are expected to operate at very high frequencies, possibly in the THz regime, making them attractive for future nanoelectronics technologies. However, due to formidable measurement difficulties, this performance has not yet been demonstrated. This paper reports: 1) the first direct observation of CNFETs operating at several hundred MHz; and 2) illustrates how to extend direct frequency response measurements to the GHz regime.

Keywords

S-parameters; electric current measurement; field effect transistors; frequency measurement; frequency response; nanotube devices; power measurement; semiconductor device measurement; C; CNFET direct performance observation; S-parameter measurement; carbon nanotube field effect transistors; current measurement; frequency response measurements; nanoelectronics; power measurement; CNTFETs; Capacitance measurement; Character generation; Crosstalk; Current measurement; Frequency measurement; Frequency response; Noise measurement; Parasitic capacitance; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367779

Filename

1367779