DocumentCode :
2102772
Title :
Fabrication of complimentary single-electron inverter in single-wall carbon nanotubes
Author :
Tsuya, D. ; Suzuki, M. ; Aoyagi, Y. ; Ishibashi, K.
Author_Institution :
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
fYear :
2004
fDate :
21-23 June 2004
Firstpage :
57
Abstract :
Single-electron devices (SEDs) based on Coulomb blockade (CB) effects have prominent features in terms of ultra-low power consumption and miniaturization to a molecular scale. The performance of the device gets better as the dot size gets small because they rely on the classical CB effect. The single-wall carbon nanotube (SWNT) is attractive material as a building block of SEDs because of the extremely small diameter of a few nanometers. In this paper, we report on the fabrication of the complimentary single-electron inverter an elemental device for the single electron logic (J.R. Tucker, J. Appl. Phys. vol. 72, p. 4399, 1992), and show the electrical performance in the temperature range from 1.5 K to 10 K.
Keywords :
Coulomb blockade; carbon nanotubes; logic gates; single electron devices; single electron transistors; 1.5 to 10 K; C; Coulomb blockade effects; SED; SET; SWNT; classical CB effect; complimentary single-electron inverter fabrication; dot size; electrical performance; molecular scale miniaturization; single electron logic device; single-electron devices; single-wall carbon nanotubes; temperature range; ultra-low power consumption; Carbon nanotubes; Chemical technology; Energy consumption; Fabrication; Inverters; Nanoscale devices; Power engineering and energy; Single electron devices; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367781
Filename :
1367781
Link To Document :
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