• DocumentCode
    2102790
  • Title

    A novel MMIC power amplifier using cascode FET with unequal gate widths

  • Author

    Hayashi, Hitoshi ; Nakatsugawa, Masashi ; Muraguchi, Masahiro

  • Author_Institution
    NTT Wireless Systems Laboratories 1-2356, Take, Yokosuka-shi, Kanagawa, 238-03 Japan
  • Volume
    1
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    24
  • Lastpage
    26
  • Abstract
    A novel MMIC power amplifier that uses a cascode FET with unequal gate widths is presented. The amplifier uses a new concept of self phase distortion compensation. By enlarging the gate widths of a common-source FET, output phase deviation can be improved without reducing the gain and output power. A prototype PA achieves the high power added efficiency of 50 % at the drain supply voltage of 3.5 V with sufficient linearity for the 1.9-GHz Japanese Personal Handy-phone System.
  • Keywords
    Distortion measurement; FETs; Impedance matching; Interchannel interference; MMICs; Operational amplifiers; Phase distortion; Power amplifiers; Power generation; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.336910
  • Filename
    4137122