DocumentCode
2102790
Title
A novel MMIC power amplifier using cascode FET with unequal gate widths
Author
Hayashi, Hitoshi ; Nakatsugawa, Masashi ; Muraguchi, Masahiro
Author_Institution
NTT Wireless Systems Laboratories 1-2356, Take, Yokosuka-shi, Kanagawa, 238-03 Japan
Volume
1
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
24
Lastpage
26
Abstract
A novel MMIC power amplifier that uses a cascode FET with unequal gate widths is presented. The amplifier uses a new concept of self phase distortion compensation. By enlarging the gate widths of a common-source FET, output phase deviation can be improved without reducing the gain and output power. A prototype PA achieves the high power added efficiency of 50 % at the drain supply voltage of 3.5 V with sufficient linearity for the 1.9-GHz Japanese Personal Handy-phone System.
Keywords
Distortion measurement; FETs; Impedance matching; Interchannel interference; MMICs; Operational amplifiers; Phase distortion; Power amplifiers; Power generation; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.336910
Filename
4137122
Link To Document