Title :
Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays
Author :
Smith, G.M. ; Donnelly, J.P. ; McIntosh, K.A. ; Duerr, E.K. ; Shaver, D.C. ; Verghese, S. ; Funk, J.E. ; Kumar, N.R. ; Mahoney, L.J. ; Molvar, K.M. ; O´Donnell, F.J. ; Chapman, D.C. ; Oakley, D.C. ; Ray, K.G.
Author_Institution :
Massachusetts Inst. of Technol., Lexington
Abstract :
The fabrication of reliable InP-based Geiger- mode avalanche photodiodes are described. Devices passivated with polyimide coated with silicon nitride have not degraded even while aging under more strenuous conditions than those used in fielded systems.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; passivation; polyimide; reliable mesa-etched inp-based geiger-mode avalanche photodiodes; Aging; Avalanche photodiodes; CMOS logic circuits; Degradation; Fabrication; Indium phosphide; Optical pulses; Passivation; Photonic band gap; Polyimides;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382503
