Title :
Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes
Author :
Ng, J.S. ; Tan, L.J.J. ; Ong, D.S.G. ; Tan, C.H. ; David, J.P.R.
Author_Institution :
Univ. of Sheffield, Sheffield
Abstract :
InP-based Separate Absorption Multiplication Avalanche Photodiodes (SAM APDs) are important components in optical communication receiver modules. They provide internal gain through carrier multiplication with relatively low excess noise, improving the system signal-to-noise ratio. Since the impact ionization process is dependent on temperature due to phonon scattering, multiplication and hence avalanche breakdown voltage, Vbd, of a SAM APD vary with temperature. The characterization of the temperature dependence of Vbd in InP is thus important in order to accurately predict device behaviour of InP-based SAM APDs.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; impact ionisation; indium compounds; optical receivers; semiconductor device breakdown; InAlAs; InP; avalanche breakdown voltage; carrier multiplication; impact ionization process; optical communication receiver modules; phonon scattering; separate absorption multiplication avalanche photodiodes; system signal-to-noise ratio; temperature dependence; Absorption; Avalanche photodiodes; Impact ionization; Indium compounds; Indium phosphide; Optical fiber communication; Optical noise; Optical receivers; Signal to noise ratio; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382505
