Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes

Author

Ng, J.S. ; Tan, L.J.J. ; Ong, D.S.G. ; Tan, C.H. ; David, J.P.R.

Author_Institution

Univ. of Sheffield, Sheffield

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

513

Lastpage

514

Abstract

InP-based Separate Absorption Multiplication Avalanche Photodiodes (SAM APDs) are important components in optical communication receiver modules. They provide internal gain through carrier multiplication with relatively low excess noise, improving the system signal-to-noise ratio. Since the impact ionization process is dependent on temperature due to phonon scattering, multiplication and hence avalanche breakdown voltage, V_bd, of a SAM APD vary with temperature. The characterization of the temperature dependence of V_bd in InP is thus important in order to accurately predict device behaviour of InP-based SAM APDs.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; impact ionisation; indium compounds; optical receivers; semiconductor device breakdown; InAlAs; InP; avalanche breakdown voltage; carrier multiplication; impact ionization process; optical communication receiver modules; phonon scattering; separate absorption multiplication avalanche photodiodes; system signal-to-noise ratio; temperature dependence; Absorption; Avalanche photodiodes; Impact ionization; Indium compounds; Indium phosphide; Optical fiber communication; Optical noise; Optical receivers; Signal to noise ratio; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382505

Filename

4382505