Resistive interconnection localization

Author

Cole, Edward I., Jr. ; Tangyunyong, Paiboon ; Hawkins, Charles F. ; Bruce, Michael R. ; Bruce, Victoria J. ; Ring, Rosalinda M. ; Chong, Wan-Loong

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

2002

fDate

2002

Firstpage

15

Lastpage

21

Abstract

Resistive interconnection localization (RIL) is a new scanning laser microscope analysis technique that directly and rapidly localizes defective IC vias, contacts, and conductors from the front side and backside. RIL uses a scanned laser to produce localized thermal gradients in IC interconnections during functional testing. A change in the pass/fail state with localized heating of the IC identifies the failing site. The technique reduces the time to locate a resistive via from months to minutes. The sources of defective vias, the physics of RIL signal generation, and examples of RIL analysis are presented.

Keywords

failure analysis; fault location; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; laser beam applications; optical microscopy; process heating; temperature distribution; IC interconnections; RIL analysis; RIL signal generation physics; defective IC conductors; defective IC contacts; defective IC vias; defective via sources; failing site identification; functional testing; localized heating; localized thermal gradients; pass/fail state; resistive interconnection localization; resistive via location; scanning laser microscope analysis technique; wafer backside analysis; wafer front side analysis; Chemical analysis; Conductors; Contacts; Failure analysis; Heating; Laser theory; Optical imaging; Optical microscopy; Physics; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the

Print_ISBN

0-7803-7416-9

Type

conf

DOI

10.1109/IPFA.2002.1025604

Filename

1025604