DocumentCode :
2102899
Title :
Fabrication process for semiconductor bonded SAW devices
Author :
Hohakawa, K. ; Koh, K. ; Kaneshiro, C. ; Aoki, Yuya ; Hong, Chuan ; Komine, Kazuteru
Author_Institution :
Kanagawa Inst. of Technol., Japan
Volume :
1
fYear :
1999
fDate :
17-20 Oct. 1999
Firstpage :
301
Abstract :
This paper reports improved fabrication processes on SAW-semiconductor coupled devices using epitaxial lift off (ELO) and film bonding technology. In order to realize a rugged bonding interface between the semiconductor film and LiNbO3, we studied (1) enhancement of release etching, (2) surface treatment of the film and substrate to realize a hydrophilic surface, (3) co-integration with polyimide film. We also report film transfer technology using polyimide and basic experimental results on SAW-semiconductor coupled test devices.
Keywords :
etching; semiconductor thin films; surface acoustic wave devices; epitaxial lift off; fabrication processes; film bonding technology; hydrophilic surface; polyimide film; release etching; rugged bonding interface; semiconductor bonded SAW devices; surface treatment; Bonding; Etching; Fabrication; Hafnium; Piezoelectric films; Polyimides; Semiconductor films; Substrates; Surface acoustic wave devices; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE
Conference_Location :
Caesars Tahoe, NV
ISSN :
1051-0117
Print_ISBN :
0-7803-5722-1
Type :
conf
DOI :
10.1109/ULTSYM.1999.849406
Filename :
849406
Link To Document :
بازگشت