Title :
Internal Field Analysis of High-Power Microwave in Impurities Semiconductor Materials
Author :
Guo Jierong ; Cai Xinhua ; Wang Xianchun
Author_Institution :
Inst. of Inf. Technol., Hunan Univ. of Arts & Sci., Changde, China
Abstract :
Caused the particularity of dielectric properties, Electromagnetic wave has their different transmit characteristics in impure semiconductor materials. Consider the high power microwave direct irradiation and transmission on semiconductor material, the law of electromagnetic waves disseminated in layered media is studied, and different substrates (usually medium and ideal conductor) are discussed separately. The treatment methods of doping concentration used in the simulation of semiconductor devices and transmission coefficient of the reflected theoretical formula of the different levels are calculated.
Keywords :
electromagnetic waves; microwave power transmission; radiation effects; semiconductor doping; semiconductor materials; dielectric properties; doping concentration; electromagnetic waves; high power microwave direct irradiation; high power microwave transmission; impure semiconductor materials; internal field analysis; semiconductor devices; transmission coefficient; Dielectric substrates; Electromagnetic fields; Electromagnetic scattering; Frequency; Microwave technology; Optical reflection; Optical surface waves; Semiconductor impurities; Semiconductor materials; Surface waves;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3692-7
Electronic_ISBN :
978-1-4244-3693-4
DOI :
10.1109/WICOM.2009.5302153
