DocumentCode :
2102924
Title :
4H-SiC PIN Recessed Window Avalanche Photodiode
Author :
Liu, Han-Din ; Mcintosh, Dion ; Bai, Xiaogang ; Pan, Huapu ; Liu, Mingguo ; Campbell, Joe C.
Author_Institution :
Univ. of Virginia, Charlottesville
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
517
Lastpage :
518
Abstract :
We report 4H-SiC p-i-n recessed window avalanche photodiodes with low dark current and high quantum efficiency. For a circular device of 250 mum diameter, the device demonstrated a responsivity of ~135.5 mW/A (external quantum efficiency = ~64%), a dark current ~90 pA (~0.183 mum/cm2) at a photocurrent gain of 1000, and an excess noise factor k of slightly less than 0.1.
Keywords :
avalanche photodiodes; silicon compounds; wide band gap semiconductors; PIN recessed window avalanche photodiode; photocurrent; Avalanche photodiodes; Biomedical optical imaging; Coatings; Dark current; Optical noise; Passivation; Photoconductivity; Photonic band gap; Quantum computing; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382507
Filename :
4382507
Link To Document :
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