• DocumentCode
    2103044
  • Title

    2V BiCMOS downconverter and upconverter chips for 1.8-5GHz band wireless communications networks

  • Author

    Madihian, M. ; Bak, E ; Imai, K. ; Yoshida, H. ; Kinoshita, Y. ; Yamazaki, T.

  • Author_Institution
    Network Research Laboratory, C&C Research Laboratories, NEC Corporation 4-1-1, Miyazaki, Miyamae-ku, Kawasaki 216 Japan
  • Volume
    1
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    This paper concerns with the design considerations and performance results for BiCMOS down-converter and upconverter modules developed for mobile and personal communications applications. Each module, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier on a single chip, is designed to operate at 2V over 1.8-5.4GHz frequency band with a maximum conversion gain higher than 34dB. Power dissipation for the downconverter and upconverter modules is, 18mW and 24mW, respectively, and chip size for both modules is 1.0mm × 0.7mm.
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; Laboratories; MOS devices; MOSFETs; Mixers; Radio frequency; Radiofrequency amplifiers; Voltage; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.336920
  • Filename
    4137133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2103044