Title :
Electrostatic discharge (ESD) and failure analysis: models, methodologies and mechanisms
Author :
Voldman, Steven H.
Author_Institution :
IBM Commun. Res. & Dev. Center, Essex Junction, VT, USA
Abstract :
Failure analysis is fundamental to the design and development methodology of electrostatic discharge (ESD) devices and ESD robust circuits. The role of failure analysis in the models, methodology, and mechanisms evaluation for improving ESD robustness of semiconductor products and magnetic recording heads are discussed.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; failure analysis; integrated circuit reliability; magnetic heads; modelling; semiconductor device reliability; ESD robust circuits; development methodology; electrostatic discharge; failure analysis; magnetic recording heads; mechanisms evaluation; models; semiconductor product ESD robustness; Analytical models; Circuit simulation; Design methodology; Electrostatic discharge; Failure analysis; Predictive models; Probability distribution; Protection; Robustness; Space vector pulse width modulation;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025612
