DocumentCode :
2103158
Title :
Subsurface Imaging of Integrated Circuits with Widefield and Confocal Microscopy Using Numerical Aperture Increasing Lens
Author :
Köklü, F. Hakan ; Vamivakas, A.N. ; Quesnel, J.I. ; Ippolito, S.B. ; Goldberg, B.B. ; Ünlü, M.S.
Author_Institution :
Boston Univ., Boston
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
535
Lastpage :
536
Abstract :
We report a lateral spatial resolution of 0.37 mum with a custom infrared widefield microscope while imaging subsurface features in silicon integrated circuits from backside. In addition, 2.65 mum apart polysilicon and metal layers can be differentiated.
Keywords :
elemental semiconductors; monolithic integrated circuits; optical microscopy; silicon; Subsurface Imaging; confocal microscopy; infrared widefield microscope; lens; metal layers; numerical aperture; silicon integrated circuits; spatial resolution; Apertures; Cellular neural networks; Focusing; Image resolution; Infrared imaging; Lenses; Nails; Optical fibers; Optical imaging; Optical microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382516
Filename :
4382516
Link To Document :
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