A study of interaction between electrostatic discharge and hot carrier effect and its effect on protection circuit reliability

Author

Manna, I. ; Tan, P.-Y. ; Tan, Y.-C. ; Lo, K.-F.

Author_Institution

Chartered Semicond. Manuf. Co., Singapore

fYear

2002

fDate

2002

Firstpage

80

Lastpage

83

Abstract

Studied the effect of non-destructive ESD events on hot carrier degradation parameters in an advanced deep submicron technology. Also investigated are two ESD protection strategies (substrate-biased NMOS and source injection technique) and they are shown to have unequal performance from the standpoint of hot-carrier reliability after ESD pre-stress.

Keywords

MOS integrated circuits; VLSI; electrostatic discharge; hot carriers; integrated circuit reliability; integrated circuit testing; protection; deep submicron technology; electrostatic discharge; hot carrier degradation parameters; hot carrier effect; hot-carrier reliability; nondestructive ESD events; pre-stress; protection circuit reliability; protection strategies; source injection technique; substrate-biased NMOS; Acceleration; Degradation; Electrostatic discharge; Hot carrier effects; Hot carriers; MOS devices; MOSFETs; Protection; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the

Print_ISBN

0-7803-7416-9

Type

conf

DOI

10.1109/IPFA.2002.1025616

Filename

1025616