Simulation study of tunneling devices with quantum confinement in source and drain

Tunneling devices being studied so far are mostly inter-band or resonant tunneling devices where discrete energy levels due to quantum confinement do not exist or exist only in the channel. Tunneling devices with quantum confinement in the source and drain (discrete energy levels there), such as coupled quantum well devices, are relatively new (A. Simmons et al., Tech. Dig. IEEE IEDM, pp. 755-758, 1997). We present self-consistent DC analyses of the electron transport in coupled quantum well systems through 2D computer simulation for the first time.