III-nitride compound semiconductors for solar cell

Author

Islam, Md Onirban ; Islam, Md Raisul ; Jahan, Dil Afroz ; Monzur-Ul-Akhir, A.A.M. ; Mahmood, Zahid Hasan

Author_Institution

Dept. of Appl. Phys., Electron. & Commun. Eng., Univ. of Dhaka, Dhaka

fYear

2008

fDate

22-24 Dec. 2008

Firstpage

124

Lastpage

128

Abstract

Solar cells are one of the best alternatives compared to our conventional or fossil energy and, thus, can play an important role in energy economy in an environment friendly fashion in the coming years. The main barrier of this technology is its low efficiency. Though the maximum theoretical efficiency of a solar cell teaches up to 86% but the practical situation is still far behind. We have discussed the main limitations of solar cell and the barriers for the efficiency of a solar cell and the perhaps the solution by using III-V compound semiconductors and their alloys. An up-to-date chronology for the efficiency has been discussed. Special attention has been given on III-Nitrides (e.g., InN) as a competitive candidate for the growth of solar cell.

Keywords

III-V semiconductors; solar cells; ternary semiconductors; III-nitride compound semiconductor; energy economy; solar cell; ternary alloys; Gallium nitride; High speed optical techniques; High-speed electronics; III-V semiconductor materials; Indium; Molecular beam epitaxial growth; Optical devices; Photonic band gap; Photovoltaic cells; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on

Conference_Location

Varanasi

Print_ISBN

978-0-230-63718-4

Type

conf

Filename

5075698