DocumentCode
2103304
Title
Threshold voltage instability of ultra-thin HfO2 NMOSFETs: characteristics of polarity dependences
Author
Rhee, Se Jong ; Kang, Chang Yong ; Kim, Young Hee ; Kang, Chang Seok ; Cho, Hag-Ju ; Choi, Rino ; Choi, Chang Hwan ; Akbar, M.S. ; Lee, Jack C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear
2004
fDate
21-23 June 2004
Firstpage
101
Abstract
Threshold voltage instability characteristics of high-k HfO2 with SiON interface NMOSFETs under three different dynamic stress conditions, positive, negative, and bipolar stress, have been investigated for the first time. Frequency and duty cycle dependencies have been observed in all three conditions. In contrast to positive AC stress, negative dynamic stress showed decrease in the threshold voltage. Bipolar stress resulted in the highest threshold voltage shift, but the degradation in transconductance and subthreshold swing was actually smaller in comparison to those in negative unipolar stress. A plausible mechanism has been proposed.
Keywords
MOSFET; dielectric polarisation; dielectric thin films; hafnium compounds; permittivity; semiconductor device testing; silicon compounds; HfO2-SiON; SiON interface NMOSFET; bipolar stress; duty cycle dependencies; dynamic stress conditions; frequency dependencies; high-k HfO2; negative dynamic stress; negative unipolar stress; polarity dependence; positive AC stress; subthreshold swing; threshold voltage instability; threshold voltage shift; transconductance degradation; ultra-thin HfO2 NMOSFET; Degradation; Dielectric materials; Frequency; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Pulse measurements; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
ISSN
1548-3770
Print_ISBN
0-7803-8284-6
Type
conf
DOI
10.1109/DRC.2004.1367803
Filename
1367803
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