Study of optical properties of CuInSe2 thin film

CuInSe₂ is a direct band gap I-III-VI ternary solar semiconductor material. The CuInSe₂ thin films for this study were prepared by co-evaporation technique from their elements on glass substrate maintained at temperatures between 200degC and 500degC in a conventional diffusion pump vacuum chamber at pressures of about 10^-5 torr at the Photovoltaic Laboratory of New Castle Upon Tyne Polytechnique, U.K. Shimadzu UV spectrophotometer (model 1201) was used to investigate optical parameters of these films within 350-1100 nm range. Transmittance, reflectance and absorptance of these films were recorded. The absorption co-efficient and the band gap of these films were calculated from these data.