Title :
Parametric modelling of linear time invariant S-parameter devices in the Laplace domain
Author :
Rolain, Y. ; Vandersteen, Gerd ; Schreurs, Dominique ; Van den Bosch, S.
Author_Institution :
Dept. ELEC/TW, Vrije Univ., Brussels, Belgium
Abstract :
A statistically founded estimator for scattering parameter matrices of linear time-invariant systems is proposed. The estimator is applied to real-world High Electron Mobility Transistor (HEMT) measurements performed on a wafer probing station between 0.5 and 50 GHz. The obtained results outperform the standard white-box models
Keywords :
S-matrix theory; S-parameters; high electron mobility transistors; parameter estimation; semiconductor device models; statistical analysis; white noise; 0.5 to 50 GHz; HEMT; InP; Laplace domain; black box model; linear time invariant S-parameter devices; parametric modelling; real-world High Electron Mobility Transistor; scattering parameter matrices; standard white-box models; statistically founded estimator; wafer probing station; Extrapolation; Frequency estimation; Frequency measurement; HEMTs; Maximum likelihood estimation; Parameter estimation; Parametric statistics; Polynomials; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1996. IMTC-96. Conference Proceedings. Quality Measurements: The Indispensable Bridge between Theory and Reality., IEEE
Conference_Location :
Brussels
Print_ISBN :
0-7803-3312-8
DOI :
10.1109/IMTC.1996.507570
