InAsSb based beterojunction photodetector for application in longwavelength infrared (LWIR) region

We propose a single heterojunction N-p GaSb/InAsSb photovoltaic detector which operates in the long wavelength infrared (LWIR) region at room temperature. Numerical computations has been carried out on the basis of the model for a N-GaSb/p-InAsSb single heterojunction photodetector operating between 2 and 5 mm. the present model takes into account the effects of radiative recombination, surface recombination and tunneling at heterointerface on the detectivity of the device. This model is used to determine, I-V characteristic, resistance-area product, detectivity, responsivity and efficiency of the detector. The peak detectivity has been obtained 2.15times10⁶ mHz^1/2 W^-1 at 300 K for the l=3.8 mm. The zero-bias resistance area product of the device is found 2.06times10^-8 &!-m² at 300 K.