Title :
Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrate
Author :
Lee, Sung-Young ; Yoon, Eun-Jung ; Kim, Sung-Min ; Oh, Chang Woo ; Li, Ming ; Kim, Dong-Won ; Chung, Ilsuh ; Park, Donggun ; Kim, Kinam
Author_Institution :
R&D Center, Samsung Electron. Co, Kyunggi-Do, South Korea
Abstract :
In this paper, we demonstrate a novel single-bridge-channel MOSFET (SBCFET) and MBCFET, on a bulk Si-substrate, for the sub-90 nm generation, by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and a damascene gate process. The double-gate structure of the MBCFET with thin body suppresses the short channel effects effectively without any halo implantation, providing a drive current that exceeds the required value of the ITRS roadmap. The MBCFET is one of the most promising candidates for high performance applications with high scalability.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor epitaxial layers; semiconductor materials; silicon; 3D thin-body MBCFET; 90 nm; SBCFET; SiGe-Si-SiGe-Si; damascene gate process; double-gate structure; drive current; multi-bridge-channel MOSFET; multiple epitaxial layer growth; short channel effect suppression; single-bridge-channel MOSFET; Dry etching; Fabrication; FinFETs; Germanium silicon alloys; Immune system; MOSFET circuits; Research and development; Silicon germanium; Substrates; Transistors;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367812
