Title :
Integration of copper with low-k dielectrics for 0.13 μm technology
Author :
Gambino, J. ; Stamper, Anthony ; McDevitt, Todd ; McGahay, V. ; Luce, S. ; Porth, B. ; Senowitz, C. ; Kontra, R. ; Gibson, M. ; Wildman, H. ; Piper, A. ; Benson, C. ; Standaert, T. ; Biolsi, P. ; Cooney, Edward
Author_Institution :
IBM Microeletronics, Essex Junction, VT
Abstract :
The integration of Cu with low-k dielectrics poses a number of challenges. In this paper, we describe yield issues associated with integration of three different low-k dielectrics; FSG (fluorosilicate glass), OSG (organosilicate glass), and polymers. Process issues that are discussed include patterning of the dielectrics, cleaning of the Cu surface, and Cu polishing.
Keywords :
chemical mechanical polishing; copper; glass; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; nanotechnology; permittivity; polymers; surface cleaning; 0.13 micron; CMP process; Cu; Cu polishing; Cu surface cleaning; Cu/low-k dielectric integration; FSG; IC yield issues; OSG; copper interconnects; dielectric patterning; fluorosilicate glass; organosilicate glass; polymers; Chemical technology; Copper; Dielectric constant; Glass; Integrated circuit interconnections; Microelectronics; Packaging; Plasma temperature; Polarization; Polymer films;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025628
