Optical properties of self-assembled Ge(Si) quantum dots grown on Si(001) by molecular beam epitaxy

Author

Das, S. ; Singha, R.K. ; Manna, S. ; Dhar, A. ; Ray, S.K.

Author_Institution

Dept. of Phys. & Meteorol., Indian Inst. of Technol., Kharagpur

fYear

2008

fDate

22-24 Dec. 2008

Firstpage

206

Lastpage

212

Abstract

We report the Raman, continuous-wave (CW) photoluminescence (PL) measurements of Ge(Si)/Si samples with an islands like morphology. The values of composition and elastic deformation of the self-assembled Ge(Si) nanoislands formed at 550degC were determined by Raman scattering spectroscopy. Due to larger islands size, and intermixing of Si and Ge, the PL peak is red shifted for longer time deposition of Ge. The observed broad PL signal from Ge(Si) islands is associated with radiative recombination of holes confined in the Ge(Si) islands and electrons localized in the Si layer.

Keywords

Ge-Si alloys; Raman spectra; elastic deformation; electron-hole recombination; elemental semiconductors; island structure; molecular beam epitaxial growth; nanostructured materials; photoluminescence; red shift; self-assembly; semiconductor quantum dots; Ge-Si-Si; Raman scattering spectroscopy; continuous-wave photoluminescence measurement; elastic deformation; molecular beam epitaxy; nanoislands; optical property; radiative recombination; red shift; self-assembled quantum dots; temperature 550 C; Charge carrier processes; Molecular beam epitaxial growth; Morphology; Optical scattering; Photoluminescence; Quantum dots; Radiative recombination; Raman scattering; Self-assembly; Spectroscopy; Ge nanoislands; MBE; Photoluminescence; Raman Spectroscopy; Self-assembly;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on

Conference_Location

Varanasi

Print_ISBN

978-0-230-63718-4

Type

conf

Filename

5075708