DocumentCode
2103618
Title
A printable form of single crystal silicon for high performance thin film transistors on plastic
Author
Menard, E. ; Khang, D.-Y. ; Lee, K. ; Nuzzo, R. ; Rogers, J.A.
Author_Institution
Illinois Univ., Urbana, IL, USA
fYear
2004
fDate
21-23 June 2004
Firstpage
127
Abstract
This talk describes the fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon. These elements are fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon, and then lifting off the silicon. A large collection of such objects - which can have geometries that range from ribbons to platelets, sheets, disks and other shapes - constitutes a type of material, which we refer to as microstructured silicon (ps-Si), that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties.
Keywords
casting; elemental semiconductors; etching; lithography; silicon; thin film transistors; transfer moulding; Si; anisotropically wet etching; bulk silicon substrates; disks; dry transfer printing; high performance thin film transistors; mechanically flexible TFT; microstructured silicon; plastic substrates; platelets; printable single crystal silicon; resist patterning; ribbons; sheets; silicon-on-insulator wafers; soft lithography; solution cast micro/nanoscale objects; solution casting; Anisotropic magnetoresistance; Electric variables; Fabrication; Plastics; Resists; Silicon on insulator technology; Soft lithography; Substrates; Thin film transistors; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location
Notre Dame, IN, USA
ISSN
1548-3770
Print_ISBN
0-7803-8284-6
Type
conf
DOI
10.1109/DRC.2004.1367816
Filename
1367816
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