• DocumentCode
    2103622
  • Title

    Modelling the photoresponse of heterojunction bipolar transistors

  • Author

    DeBarros, L. E M, Jr. ; Paolella, A. ; Herczfeld, P. ; Enquist, P

  • Volume
    1
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    An analytic model, which solves for the electrical and photogenerated currents in the emitter, base and collector of an HBT, is presented. Self aligned and non self-aligned devices, which have different empirical characteristics, are discussed. In the case of abrupt junctions, the model provides a correction term for the boundary conditions that account for band discontinuities. Experimental and theoretical results relating to the characteristics of the illuminated device given.
  • Keywords
    Boundary conditions; Doping; Equations; Frequency response; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Photonic band gap; Photovoltaic effects; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.336941
  • Filename
    4137154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2103622