Title :
HEMT physical model for MMMIC CAD
Author :
Morton, C.G. ; Snowden, C.M. ; Howes, M.J.
Author_Institution :
Department of Electronic and Electrical Engineering, University of Leeds, Leeds, UK.
Abstract :
A quasi-two dimensional HEMT model is reported which for the first time accurately predicts the DC and millimetre-wave operation of the device over all bias conditions. The model accurately predicts HEMT operation close to device pinch-off and shows no spurious responses of the bias dependence of the equivalent circuit which is extracted from the simulated S-parameters at 60 GHz. The accuracy of the model is attributed to the fact that the conditions of conservation of charge and momentum are both rigorously maintained, a feature which has not appeared in previously reported implementations. The execution time of the model remains extremely fast, making it well suited to CAD applications.
Keywords :
Circuit simulation; Electron mobility; Equivalent circuits; HEMTs; MMICs; Poisson equations; Predictive models; Scattering parameters; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
DOI :
10.1109/EUMA.1995.336946
