DocumentCode :
2103739
Title :
Spectral behavior of quantum dots-in-a-well infrared photodetectors grown by MOCVD
Author :
Jolley, G. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Australian Nat. Univ. Canberra, Canberra
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
580
Lastpage :
581
Abstract :
We present the spectral behavior of two different quantum dots-in-a-well (dwell) infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). In0.5Ga0.5As quantum dots (QDs) in an In0.15Ga0.85As/GaAs quantum well (QW) and In0.5Ga0.5As QDs in a GaAs/Al0.2Ga0.8As QW have been incorporated into photodetectors and characterized. A spectral response in the 3-5 mum atmospheric window has been achieved due to the band-structure engineering that is possible with the dwell structure.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; photodetectors; quantum dots; quantum wells; In0.15Ga0.85As-GaAs; In0.5Ga0.5As; MOCVD; low-pressure metal-organic chemical vapor deposition; quantum dots-in-a-well infrared photodetectors; quantum well; spectral behavior; spectral response; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Infrared spectra; Inorganic materials; MOCVD; Photodetectors; Quantum dots; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382539
Filename :
4382539
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2103739
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