DocumentCode
2103800
Title
Phosphor-Free GaN-Based Cascade Transverse Junction Light Emitting Diode Arrays for the High-Power Generation of White-Light
Author
Shi, J.-W. ; Guo, Shi-Hao ; Sheu, J.K. ; Lai, W.C. ; Wang, C.K. ; Chen, C.-H. ; Kuo, Cheng-Huang ; Chyi, J.-I.
Author_Institution
Nat. Central Univ., Taoyuan
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
584
Lastpage
585
Abstract
By utilizing GaN based four cascade transverse p-n junctions with blue/green multiple-quantum-wells, demonstrated phosphor-free device can eliminate current crowding problem and generate near visible white-light spectra with invariable shape under a wide range of bias current.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; p-n junctions; semiconductor quantum wells; wide band gap semiconductors; GaN; bias current; cascade transverse p-n junctions; current crowding; light emitting diode arrays; multiple quantum wells; near visible white-light spectra; Gallium nitride; Light emitting diodes; Optical arrays; Optical pumping; P-n junctions; Phosphors; Power generation; Quantum well devices; Semiconductor laser arrays; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382541
Filename
4382541
Link To Document