• DocumentCode
    2103825
  • Title

    Modeling and ATLAS simulation studies on mid-infrared homojunction LED

  • Author

    Sanjeev ; Chakrabarti, P.

  • Author_Institution
    Dept. of Electron. & Instrum. Eng., MJP Rohilkhand Univ., Bareilly
  • fYear
    2008
  • fDate
    22-24 Dec. 2008
  • Firstpage
    253
  • Lastpage
    259
  • Abstract
    In this paper, we present ATLAS simulation studies of a mid-infrared (MIR) PIN homo-junction light emitting diode (LED) based on p+-InAs0.91Sb0.09/n0-InAs0.91Sb0.09/ n+-InAs0.91Sb0.09 material system at room temperature. Various electro-optical properties of the LED have been modeled. The effect of high carrier injection has been evaluated on the output power of LED and theoretical findings found to be in good agreement with the reported experimental results.
  • Keywords
    III-V semiconductors; charge injection; indium compounds; light emitting diodes; p-i-n diodes; semiconductor device models; ATLAS simulation; InAs0.91Sb0.09; LED output power; PIN light emitting diode; carrier injection; midinfrared homojunction light emitting diode; temperature 293 K to 298 K; Electromagnetic wave absorption; Infrared detectors; Instruments; Light emitting diodes; Photonic band gap; Power generation; Radiative recombination; Semiconductor materials; Semiconductor process modeling; Temperature; ATLAS; Absorption Gas Spectroscopy; Light Emitting Diode; Mid-infrared; PIN Homojunction; Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
  • Conference_Location
    Varanasi
  • Print_ISBN
    978-0-230-63718-4
  • Type

    conf

  • Filename
    5075715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2103825