DocumentCode
2103845
Title
Fabrication and Yield of Large Area Quantum Well Modulators
Author
Goossen, K.W. ; Prather, D.
Author_Institution
Univ. of Delaware, Newark
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
590
Lastpage
591
Abstract
InP-based multiple quantum well modulators were fabricated and the yield of the modulators was explored. Bad pixels were removed from operation which reduced the modulation area but limits the power consumption. Leakage around the 15 volts reverse bias were also investigated.
Keywords
III-V semiconductors; indium compounds; optical modulation; quantum well devices; InP; leakage; modulation area; modulator yield; multiple quantum well modulators; power consumption; reverse bias; Fabrication; Indium compounds; Micromechanical devices; Optical modulation; P-i-n diodes; Quantum well devices; Quantum well lasers; Semiconductor devices; Semiconductor lasers; Unmanned aerial vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382544
Filename
4382544
Link To Document