Title :
Fabrication and Yield of Large Area Quantum Well Modulators
Author :
Goossen, K.W. ; Prather, D.
Author_Institution :
Univ. of Delaware, Newark
Abstract :
InP-based multiple quantum well modulators were fabricated and the yield of the modulators was explored. Bad pixels were removed from operation which reduced the modulation area but limits the power consumption. Leakage around the 15 volts reverse bias were also investigated.
Keywords :
III-V semiconductors; indium compounds; optical modulation; quantum well devices; InP; leakage; modulation area; modulator yield; multiple quantum well modulators; power consumption; reverse bias; Fabrication; Indium compounds; Micromechanical devices; Optical modulation; P-i-n diodes; Quantum well devices; Quantum well lasers; Semiconductor devices; Semiconductor lasers; Unmanned aerial vehicles;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382544
