Title :
Further support to the large band gap 1.95 eV of InN
Author :
Kabi, Sanjib ; Kumar, Subindu ; Biswas, Dipankar ; Das, Tapas
Author_Institution :
Inst. of Radiophys.&Electron., Univ. of Calcutta, Kolkata
Abstract :
Indium nitride (InN) is an important and mysterious III-nitride semiconductor with many potential applications. During the last few years the interest in InN. has been remarkable. The use of InN and its alloys makes it possible to extend the emission of nitride-based Light Emitting Diodes (LEDs) from ultraviolet to near infrared region. In recent years an exciting conflict has arisen regarding the most fundamental property of InN, the band gap energy. Few research groups claim that the band gap of InN is around 0.7 eV while other groups argue that the band gap is around 1.9 eV. In this paper we provide further support to the large band gap 1.95 eV of InN.
Keywords :
III-V semiconductors; energy gap; indium compounds; wide band gap semiconductors; III-nitride semiconductor; InN; band gap energy; indium nitride; Displacement measurement; Indium; Light emitting diodes; Nanostructures; Optical films; Photoluminescence; Photonic band gap; Plasma measurements; Plasma temperature; Substrates; Annealing; Photoluminescence; Quantum Wells;
Conference_Titel :
Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
Conference_Location :
Varanasi
Print_ISBN :
978-0-230-63718-4
