Title :
Bandgap reduction in dilute InPN grown by liquid phase epitaxy
Author :
Das, T.D. ; Das, S.C. ; Dhar, S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Calcutta, Kolkata
Abstract :
We report the absorption and photoluminescence (PL) properties of dilute InPN layers grown by liquid phase epitaxy. All samples were characterized by high resolution X-ray diffraction at room temperature. The band anticrossing model accounts very well for recent experimental results obtained on different samples. Our results indicate that a maximum amount of 0.2% nitrogen has been incorporated in the material with a band gap lowering consistent with expectations. Our theoretical results provide a good agreement with the available experimental data.
Keywords :
III-V semiconductors; X-ray diffraction; absorption coefficients; indium compounds; photoluminescence; semiconductor epitaxial layers; HRXRD; III-V semiconductor; InPN; absorption coefficient; band anticrossing model; bandgap reduction; high resolution X-ray diffraction; liquid phase epitaxy layer; optical absorption properties; photoluminescence properties; temperature 293 K to 298 K; Epitaxial growth; Etching; III-V semiconductor materials; Indium phosphide; Lattices; Nitrogen; Photoluminescence; Photonic band gap; Substrates; Temperature; Dilute Nitride; Energy Gap; HRXRD; Liquid Phase Epitaxy; Photoluminescence;
Conference_Titel :
Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
Conference_Location :
Varanasi
Print_ISBN :
978-0-230-63718-4
