• DocumentCode
    2103942
  • Title

    Minority carrier lifetime, measurement of solar cell

  • Author

    Ranjan, Vikash ; Solanki, Chetan S. ; Lal, R.K.

  • Author_Institution
    Birla Inst. of Technol., Ranchi
  • fYear
    2008
  • fDate
    22-24 Dec. 2008
  • Firstpage
    299
  • Lastpage
    306
  • Abstract
    The experimental technique for determining the minority carrier lifetime within the base region of p-n junction solar cells is presented in this paper. The value of minority carrier lifetime is of tremendous use in estimating the performance of solar cell. The procedure is to illuminate the solar cell with a flash of white light from light source for say, microseconds and then to monitor the decay nature of open circuit voltage (for around few milliseconds). The work is mainly focused on ldquoSmall Signalrdquo open circuit Voltage Decay Method in which the intensity of light is small and the surface of solar cell is illuminated for a very small time in which minority carriers are generated in the base region of the solar cells which start recombining after switching ldquooffrdquo the light source and hence a decay curve of open circuit voltage(Voc) is obtained which is exponential in nature and from the time constant of the decay the minority carrier lifetime can be calculated. Experiment is carried out for five different samples of solar cells.
  • Keywords
    carrier lifetime; p-n junctions; solar cells; decay curve; minority carrier lifetime measurement; p-n junction solar cells; small signal open circuit voltage decay method; time constant; Charge carrier lifetime; Circuits; Life estimation; Lifetime estimation; Light sources; Monitoring; P-n junctions; Photovoltaic cells; Signal generators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
  • Conference_Location
    Varanasi
  • Print_ISBN
    978-0-230-63718-4
  • Type

    conf

  • Filename
    5075722