DocumentCode :
2103986
Title :
Materials and device developments for ultraviolet LEDs and laser diodes
Author :
Bergmann, M. ; Kuhr, T. ; Haberem, K. ; Hussell, C. ; Abare, A. ; Emerson, D.
Author_Institution :
Cree, Inc, Durham, NC, USA
fYear :
2004
fDate :
21-23 June 2004
Firstpage :
151
Abstract :
AlGaInN-based ultraviolet (UV) light emitters have recently become the focus of intense research since semiconductor UV optical sources offer the potential of low cost, small size, low power, and high reliability. In this paper, we summarize critical elements for optimizing LED and LD performance in the sub-390 nm range. Lifetime results on both LEDs and LDs are discussed along with issues concerning further increasing the lifetime of these short wavelength devices, increasing their efficiency, and pushing emission wavelength even shorter.
Keywords :
life testing; light emitting diodes; optimisation; semiconductor lasers; ultraviolet sources; 390 nm; AlGaInN; UV laser diodes; UV optical sources; device optimization; efficiency increase; emission wavelength; lifetime increase; lifetime tests; short wavelength devices; ultraviolet LED; ultraviolet light emitters; Biomedical optical imaging; Diode lasers; Light emitting diodes; Optical materials; Optical scattering; Photonic band gap; Power generation; Silicon; Stimulated emission; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location :
Notre Dame, IN, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367831
Filename :
1367831
Link To Document :
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