Materials and device developments for ultraviolet LEDs and laser diodes

Author

Bergmann, M. ; Kuhr, T. ; Haberem, K. ; Hussell, C. ; Abare, A. ; Emerson, D.

Author_Institution

Cree, Inc, Durham, NC, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

151

Abstract

AlGaInN-based ultraviolet (UV) light emitters have recently become the focus of intense research since semiconductor UV optical sources offer the potential of low cost, small size, low power, and high reliability. In this paper, we summarize critical elements for optimizing LED and LD performance in the sub-390 nm range. Lifetime results on both LEDs and LDs are discussed along with issues concerning further increasing the lifetime of these short wavelength devices, increasing their efficiency, and pushing emission wavelength even shorter.

Keywords

life testing; light emitting diodes; optimisation; semiconductor lasers; ultraviolet sources; 390 nm; AlGaInN; UV laser diodes; UV optical sources; device optimization; efficiency increase; emission wavelength; lifetime increase; lifetime tests; short wavelength devices; ultraviolet LED; ultraviolet light emitters; Biomedical optical imaging; Diode lasers; Light emitting diodes; Optical materials; Optical scattering; Photonic band gap; Power generation; Silicon; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

Conference_Location

Notre Dame, IN, USA

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367831

Filename

1367831