Characteristics of high-performance 1.0 μm and 1.3 μm quantum dot lasers: impact of p-doping and tunnel injection

Author

Fathpour, S. ; Mi, Z. ; Chakrabarti, S. ; Bhattacharya, P. ; Kovsh, A.R. ; Mikhrin, S.S. ; Krestnikov, I.L. ; Kozhukhov, A.V. ; Ledentsov, N.N.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

156

Abstract

There is a need to understand the performance limitations and the role of special techniques to enhance quantum dot (QD) laser performance. In this context, we have examined the role of p-doping in the dots and tunnel injection of electrons into the active dots in the lasers. Utilizing these techniques, we demonstrate QD lasers with zero temperature dependence of the threshold current (T₀=∞) and the output slope efficiency and small signal modulation bandwidth ≅25 GHz. It is apparent that an optimal level of p-doping, combined with tunnel injection, will lead to lasers with high modulation bandwidth, zero chirp and very high T₀. These results are presented and discussed.

Keywords

doping profiles; quantum dot lasers; tunnelling; 1.0 micron; 1.3 micron; 25 GHz; GaAs-GaAlAs; QD lasers; active dot electron tunnel injection; output slope efficiency; quantum dot lasers; quantum dot p-doping; small signal modulation bandwidth; threshold current zero temperature dependence; Bandwidth; Chirp modulation; Laser modes; Quantum dot lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Threshold current; US Department of Transportation; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367834

Filename

1367834