Title :
A low-temperature Si/SiGe impact diode for improved infrared sensing
Author :
Meteer, Jami A. ; Eikenberry, S.S. ; Huffman, James E. ; Kan, Edwin C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperature characteristics, low voltage operation, and low noise multiplication mechanism as required for compatibility with mid- and far infrared detection. Physical characterization, including composition and doping profiles, are obtained from STEM and SIMS analyses. Photocurrent multiplication is measured to confirm our device design.
Keywords :
Ge-Si alloys; doping profiles; elemental semiconductors; infrared detectors; low-power electronics; photoconductivity; photodiodes; quantum well devices; scanning-transmission electron microscopy; secondary ion mass spectroscopy; semiconductor materials; 10 V; 10 to 150 K; IBC infrared detectors; QW diode; SIMS; STEM; Si-SiGe; doping profiles; far-IR detection; ideal gain structures; impurity band conduction; infrared sensing; low noise multiplication mechanism; low voltage operation; low-temperature impact diode; mid-IR detection; photocurrent multiplication; quantum well impact diodes; Astronomy; Electrons; Germanium silicon alloys; Infrared detectors; P-i-n diodes; Photoconductivity; Semiconductor device noise; Semiconductor diodes; Silicon germanium; Temperature;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367847
