DocumentCode
2104418
Title
Degradation behaviour of polysilicon high voltage thin film transistors
Author
Mugnier, M. ; Manhas, S.K. ; Sekhar, D. Chandra ; Krishnan, S. ; Cross, R. ; Narayanan, E. M Sankara ; De Souza, M.M. ; Flores, D. ; Vellvehi, M. ; Millan, J.
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fYear
2002
fDate
2002
Firstpage
219
Lastpage
222
Abstract
The degradation characteristics of polycrystalline silicon Off-set Drain High Voltage Thin Film Transistors (OD-HVTFTs) are reported. The results demonstrate a pronounced kink in the transfer characteristics at high gate bias, due to degradation of the offset region. This effect is particularly noticeable in non-hydrogenated HVTFTs. Annealing of devices in atmospheric ambient after stress shows temperature dependent recovery.
Keywords
annealing; elemental semiconductors; power MOSFET; semiconductor device reliability; silicon; thin film transistors; Si; annealing; degradation characteristics; kink effect; polysilicon off-set drain high voltage thin film transistor; recovery; reliability; transfer characteristics; Active matrix liquid crystal displays; Annealing; Degradation; Glass; Low voltage; Silicon; Stress; Temperature; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN
0-7803-7416-9
Type
conf
DOI
10.1109/IPFA.2002.1025666
Filename
1025666
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