Title :
Suppression of boron penetration by hot wire CVD polysilicon
Author :
Vairagar, Anand V. ; Patil, Samadhan B. ; Pete, D.J. ; Waghmare, Parag C. ; Dusane, R.O. ; Venkatramani ; Ramgopal Rao
Author_Institution :
Interdisciplinary Program in Reliability Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
In the current and future deep sub-micron technologies, boron penetration through the gate dielectric is a severe reliability concern for the dual gate CMOS technology. In this paper we report results of our attempts to exploit the potential of Hot Wire CVD (HWCVD) for depositing poly-Si gate for CMOS technology. The effect of grain size of poly-Si gate on boron penetration is studied by varying the poly-Si grain size through variation in the HWCVD parameters.
Keywords :
CMOS integrated circuits; CVD coatings; boron; elemental semiconductors; grain size; integrated circuit technology; silicon; Si:B; boron penetration; deep sub-micron technology; dual gate CMOS technology; gate dielectric; grain size; hot wire CVD polysilicon; poly-Si gate; Boron; CMOS process; CMOS technology; Gases; Grain size; Hydrogen; Surface cracks; Temperature; Tungsten; Wire;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025667
