Title :
Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers
Author :
Manhas, S.K. ; De Souza, M.M. ; Oates, A.S. ; Chen, Y.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
The effect of oxide damage on the electron mobility in n-channel inversion layers is studied. It is observed that as a result of stress, the universal mobility model becomes interface charge dependent. The effect of interface damage, attributed to Coulomb scattering in the region of strong inversion, can be described by a change in universal model parameters with interface charge (Nit). An Nit-dependent model is presented which can be easily assimilated in simulation tools by circuit designers to accurately predict impact of device degradation on performance.
Keywords :
MOSFET; electron mobility; interface states; inversion layers; semiconductor device models; Coulomb scattering; device degradation; electron mobility; interface charge; n-MOSFET inversion layer; oxide damage; stress; universal model; Circuit simulation; Degradation; Interface states; Predictive models; Pulse measurements; Scattering; Semiconductor device modeling; Stress; Threshold voltage; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025668
