Next Generation Infrared Sensors: Enhanced Pixel Functionality Using Nanoscale Physics

Author

Krishna, Sanjay

Author_Institution

Univ. of New Mexico, Albuquerque

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

646

Lastpage

647

Abstract

This presentation will be focused on the fabrication of focal plane arrays using two material systems which are emerging as promising technologies for mid infrared sensors. These are (1) InAs/InGaAs self assembled quantum dots in well (DWELL) detectors (2) InAs/(In,Ga)Sb strain layer superlattices (SLS) detectors.The growth issues (group V exchange and the interface chemistry) and the structural and optical characterization techniques will be discussed.

Keywords

III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; enhanced pixel functionality; focal plane arrays; growth issues; interface chemistry; mid infrared sensors; nanoscale physics; next generation infrared sensors; optical characterization; self assembled quantum dots in well detectors; strain layer superlattices detectors; structural characterization; Capacitive sensors; Chemical technology; Fabrication; Indium gallium arsenide; Infrared sensors; Optical materials; Physics; Quantum dots; Self-assembly; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382572

Filename

4382572