DocumentCode
2104538
Title
Ge in main-stream CMOS: a future or fancy?
Author
Kalavade, P. ; Shulze, J.
fYear
2004
fDate
21-23 June 2004
Abstract
Summary form only given. As scaling continues, attention is returning to germanium and Ge-on-insulator (GOI) MOSFETs. This paper considers whether Ge technology is a viable alternative or a fanciful diversion. It discusses the scalability of Ge MOSFETs, the use of high-k dielectrics, cost effectiveness, and the circuits most likely to benefit the most, such as low power, high performance, memory, and optoelectronics.
Keywords
CMOS memory circuits; MOSFET; dielectric thin films; elemental semiconductors; germanium; integrated optoelectronics; low-power electronics; CMOS; GOI; Ge; Ge-on-insulator; MOSFET scaling; high-k dielectrics; low power circuits; memory circuits; optoelectronics; Circuits; Germanium silicon alloys; High-K gate dielectrics; Lifting equipment; MOSFETs; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location
Notre Dame, IN, USA
ISSN
1548-3770
Print_ISBN
0-7803-8284-6
Type
conf
DOI
10.1109/DRC.2004.1367855
Filename
1367855
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