DocumentCode
2104548
Title
WBB3 - 4:15 PM - 4:30 PM
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
650
Lastpage
651
Abstract
It is reported that avalance photodiodes (APDs) were fabricated using InAs-GaSb SLS on GaSb (001) substrate to detect the longer wavelengths (Mid-wavelength Infrared (MWIR) 3-5mum, Long-wavelength Infrared (LWIR) 8-10μm).
Keywords
Breakdown voltage; Dark current; Diodes; Infrared detectors; Laser sintering; Molecular beam epitaxial growth; Passivation; Temperature; Weapons; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0924-2
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382574
Filename
4382574
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