Title :
WBB3 - 4:15 PM - 4:30 PM
Abstract :
It is reported that avalance photodiodes (APDs) were fabricated using InAs-GaSb SLS on GaSb (001) substrate to detect the longer wavelengths (Mid-wavelength Infrared (MWIR) 3-5mum, Long-wavelength Infrared (LWIR) 8-10μm).
Keywords :
Breakdown voltage; Dark current; Diodes; Infrared detectors; Laser sintering; Molecular beam epitaxial growth; Passivation; Temperature; Weapons; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0924-2
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382574
